TCAD oriented simulation of single-electron transistors at device level
نویسندگان
چکیده
In this paper we present a simulation approach for electron transport in singleelectron devices based on a weak-coupling formulation for the linear-response transconductance of a quantum dot/reservoir system. A simulation tool devised for the simulation of single-electron transistors has been developed. It provides the equilibrium solution of the nonlinear Poisson equation for the classical charges in the bulk and the self-consistent solution of the 3D-SchrodingerPoisson equation for the quantum dot. The finite temperature groundstate of the few-electron ensemble in the dot is extracted by evaluation of the Gibbs distribution. The program is coupled to a 3D modeling tool for flexible geometry specification.
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